Indium oxide thin film prepared by low temperature atomic layer deposition using liquid precursors and ozone oxidant

초록

Transparent conducting Indium oxide (InOx) thin films were deposited by atomic layer deposition at low deposition temperatures below 100 degrees C. For the comparative study with liquid precursors in low temperature thermal ALD, diethyl[1,1,1-trimethyl-N-(trimethylsilyl) silanaminato]-Indium, [3-(dimethylamino- kN) propyl-kC] dimethyl-Indium, and triethyl indium (TEIn) were used as the In precursors. Ozone was used as the oxidant for all precursors. InOx films grown using the three precursors all exhibit relatively low electrical resistivity below 10(-3) Omega cm at temperatures above 150 degrees C. Below 100 degrees C, the lowest resistivity (2 x 10(-3) Omega cm) was observed in the films grown with TEIn. The electrical, structural and optical properties were systematically investigated as functions of the deposition temperature and precursors.

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