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Soluble-processed aluminum doped yttrium oxide gate insulator for high performance amorphous oxide transistors
- Lee, Jiwon;
- Shin, Yeonwoo;
- Jeong, Jae Kyeong
Citations
SCOPUS
0초록
The low-cost spin-cast AI0.4Y1.6O3 films were prepared as the gate insulator for the IZO transistors. The ternary AI0.4Y1.6O3 films provide a smooth, high permittivity with excellent insulating properties compared to binary AI2O3 or Y2O3 films. This behavior can be attributed to the structure stabilization resulting from the cation alloying-mixing effect.
키워드
Aluminum yttrium oxide; Indium zinc oxide; Solution process; Ternary alloy; Thin-film transistor; II-VI semiconductors; Indium compounds; Ternary alloys; Thin film transistors; Thin films; Yttrium oxide; Zinc oxide; Amorphous oxides; Gate insulator; High permittivity; Indium zinc oxides; Insulating properties; Mixing effects; Solution process; Structure stabilization; Aluminum oxide
- 제목
- Soluble-processed aluminum doped yttrium oxide gate insulator for high performance amorphous oxide transistors
- 저자
- Lee, Jiwon; Shin, Yeonwoo; Jeong, Jae Kyeong
- 발행일
- 2017-12
- 유형
- Conference Paper
- 저널명
- Proceedings of the International Display Workshops
- 권
- 1
- 페이지
- 410 ~ 412
- 언어
- ENG
- 분량
- 3 페이지
- ISSN
- P 1883-2490