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Anisotropic rearrangement of the substrate atoms during Ar bombardment on Pd(0 0 1) surface
- Kim, Sang-Pil;
- Kim, Byung-Hyun;
- Kim, Haeri;
- Lee, Kwang-Ryeol;
- Chung, Yong-Chae;
- 외 2명
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3초록
Using a three-dimensional molecular dynamics (MD) simulation, we investigated the atomic scale rearrangement that occurs on a Pd(0 0 1) surface after energetic bombardment by Ar at room temperature. High energy Ar bombardment provoked the significant rearrangement of Pd atoms in a ballistic manner with a fourfold symmetric lateral distribution aligned along the < 1 1 0 > direction. The MD simulation of uniform Ar bombardment at normal incidence on a Pd surface reproduced the experimentally observed fourfold symmetric nano-scale surface structure. The present result supports that the ballistic rearrangement of the substrate atoms plays an important role in the ion induced surface structure evolution.
키워드
Cascade induced rearrangement; MD simulation; Pd(001) surface; Surface nanostructuring; ION-BOMBARDMENT; MOLECULAR-DYNAMICS; PT(111)
- 제목
- Anisotropic rearrangement of the substrate atoms during Ar bombardment on Pd(0 0 1) surface
- 저자
- Kim, Sang-Pil; Kim, Byung-Hyun; Kim, Haeri; Lee, Kwang-Ryeol; Chung, Yong-Chae; Seo, Jikeun; Kim, Jae-Sung
- 발행일
- 2011-11
- 유형
- Article
- 권
- 269
- 호
- 21
- 페이지
- 2605 ~ 2609