Anisotropic rearrangement of the substrate atoms during Ar bombardment on Pd(0 0 1) surface

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3

초록

Using a three-dimensional molecular dynamics (MD) simulation, we investigated the atomic scale rearrangement that occurs on a Pd(0 0 1) surface after energetic bombardment by Ar at room temperature. High energy Ar bombardment provoked the significant rearrangement of Pd atoms in a ballistic manner with a fourfold symmetric lateral distribution aligned along the < 1 1 0 > direction. The MD simulation of uniform Ar bombardment at normal incidence on a Pd surface reproduced the experimentally observed fourfold symmetric nano-scale surface structure. The present result supports that the ballistic rearrangement of the substrate atoms plays an important role in the ion induced surface structure evolution.

키워드

Cascade induced rearrangement; MD simulation; Pd(001) surface; Surface nanostructuring; ION-BOMBARDMENT; MOLECULAR-DYNAMICS; PT(111)
제목
Anisotropic rearrangement of the substrate atoms during Ar bombardment on Pd(0 0 1) surface
저자
Kim, Sang-Pil; Kim, Byung-Hyun; Kim, Haeri; Lee, Kwang-Ryeol; Chung, Yong-Chae; Seo, Jikeun; Kim, Jae-Sung
DOI
10.1016/j.nimb.2011.07.093
발행일
2011-11
유형
Article
저널명
Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
권
269
호
21
페이지
2605 ~ 2609