GaSb/InGaAs 2-dimensional hole gas grown on InP substrate for III-V CMOS applications

초록

We grew a two-dimensional hole gas (2DHG) system using a GaSb quantum well layer sandwiched by InGaAs layers in Molecular Beam Epitaxy (MBE). The 2DHG quantum well was achieved using a spreading modulation doping method with Be-dopant. The cross-sectional STEM image clearly shows that large dislocations by lattice-mismatch are relaxed in all layers. We confirmed substantial valence and conduction band offsets in the 2DHG by simulated results. The electrical properties were also observed by Hall measurement, indicating a high hole mobility of 653 ㎠/Vs and high carrier concentration of 4.3 x 10¹²/㎠ at RT.

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