The effects of a HfO2 buffer layer on Al2O3-passivated indium-gallium-zinc-oxide thin film transistors

Ko, Youngbin; Bang, Seokhwan; Lee, Seungjun; Park, Soyeon; Park, Joohyun; Jeon, Hyeongtag

doi:10.1002/pssr.201105340

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The effects of a HfO2 buffer layer on Al2O3-passivated indium-gallium-zinc-oxide thin film transistors

Ko, Youngbin;
Bang, Seokhwan;
Lee, Seungjun;
Park, Soyeon;
Park, Joohyun;
외 1명

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17

초록

In this study, the effects of a HfO2 buffer layer between an Al2O3 passivation layer and an indium-gallium-zinc-oxide (IGZO) thin film transistor (TFT) were investigated to enhance the environmental stability and electrical properties of the IGZO TFT. When applying the HfO2 buffer layer, the formation of HfAlxOy at the Al2O3/HfO2 interface reduces the water vapor transmission rate (WVTR) due to densification of the passivation layer. Consequently, by adding the HfO2 buffer layer, WVTR of the TFT was highly improved; moreover, changes in the electrical characteristics can be prevented compared to both the non-passivated and Al2O3-passivated TFTs.

키워드

atomic layer deposition; thin film transistors; passivation; IGZO; HfO2; Al2O3; ROOM-TEMPERATURE; DEPOSITION; AL2O3; HYDROGEN; PLASMA

제목: The effects of a HfO2 buffer layer on Al2O3-passivated indium-gallium-zinc-oxide thin film transistors

저자: Ko, Youngbin; Bang, Seokhwan; Lee, Seungjun; Park, Soyeon; Park, Joohyun; Jeon, Hyeongtag

DOI: 10.1002/pssr.201105340

발행일: 2011-11

유형: Article

저널명: Physica Status Solidi - Rapid Research Letetrs

권: 5

호: 10-11

페이지: 403 ~ 405