상세 보기
Synthesis of Superior-Performance InGaZnO Based on Ideal Reaction of Plasma Enhanced Atomic Layer Deposition
- Kim, Yoon-Seo;
- Oh, Hye-Jin;
- Kim, Junghwan;
- Lim, Jun Hyung;
- Park, Jin-Seong
Citations
SCOPUS
0초록
Based on moderating the reaction energy of plasma enhanced atomic layer deposition (PEALD), we fabricated a superior-performance InGaZnO transistor with the ultra-high field effect mobility over 100 cm2/Vs, absolute threshold voltage under 0.5 V, and subthreshold swing lower than 100 mV/decade. This study will be powerful basic of synthesizing the ALD-based oxide semiconductor for scaling down such as 3D integration applications.
키워드
Ideal reaction; Indium gallium zinc oxide (IGZO); Plasma enhanced atomic layer deposition (PEALD); Thin-Film Transistors (TFTs); Ultra-high mobility; C. thin film transistor (TFT); High mobility; Ideal reaction; Indium gallium zinc oxide; Performance; Plasma enhanced atomic layer deposition; Plasma-enhanced atomic layer deposition; Thin-film transistor; Ultra-high; Ultra-high mobility
- 제목
- Synthesis of Superior-Performance InGaZnO Based on Ideal Reaction of Plasma Enhanced Atomic Layer Deposition
- 저자
- Kim, Yoon-Seo; Oh, Hye-Jin; Kim, Junghwan; Lim, Jun Hyung; Park, Jin-Seong
- 발행일
- 2023-05
- 유형
- Conference paper
- 권
- 54
- 호
- 1
- 페이지
- 1806 ~ 1809
- 언어
- ENG
- 분량
- 4 페이지
- ISSN
- E 2168-0159
P 0097-966X