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Structural effect of LaAlO3/SrTiO3 interface on electronic properties: Ab-initio calculations
- Park, Hayan;
- Park, Hong-Lae;
- Chung, Yong-Chae
Citations
SCOPUS
0초록
The structural aspects of LaAlO3/SrTiO3 heterostructure were investigated in detail to explain the electronic properties of interface. Cell volume change, atomic displacements were calculated for the (1x1) LaAlO3(m unit cells, m=3, 5)/SrTiO3 (4 unit cells) system using ab-initio method. Both of LaAlO3 and SrTiO3 cells were stretched in longitudinal directions. The oxygen atoms in the cells moved to n-type interface and the movement, consequently, could be interred to contribute the conductivity of n-type interface.
키워드
Ab initio; Ab initio calculations; Atomic displacement; Cell volume; Heterostructures; Longitudinal direction; Oxygen atom; SrTiO; Structural aspects; Structural effect; Unit cells; Electronic properties; Nanoelectronics; Oxygen; Strontium alloys; Lanthanum alloys
- 제목
- Structural effect of LaAlO3/SrTiO3 interface on electronic properties: Ab-initio calculations
- 저자
- Park, Hayan; Park, Hong-Lae; Chung, Yong-Chae
- 발행일
- 2010-03
- 유형
- Conference Paper
- 저널명
- INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings
- 페이지
- 1254 ~ 1255