The Influence of Nano-Si Thickness and Ge Concentration on Self-heating Effect in Sub-60 nm Ultra-thin Body Silicon-on-insulator and Strained Si SiGe-on-insulator n-MOSFETs
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The Influence of Nano-Si Thickness and Ge Concentration on Self-heating Effect in Sub-60 nm Ultra-thin Body Silicon-on-insulator and Strained Si SiGe-on-insulator n-MOSFETs