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초록
Capacitance-voltage (C-V) and Deep-level transient spectroscopy (DLTS) measurements on AlxGa1-xN/GaN heterostructures were performed to investigate the existence of the carriers and the behavior of the deep levels in the AlxGa1-xN/GaN heterointerface. The C-V depth profile showed that the carrier concentration existed at the Al xGa1-xN/GaN heterointerface was 4 × 1012 cm2. The DLTS results showed two deep levels. The capture cross-section of the deep level related to the two-dimensional electron gas decreased with increasing depth, resulting from the existence of the different deep levels in each region.
키워드
Deep levels; Two-dimensional electron gas region; Capacitance; Growth (materials); Heterojunctions; Molecular beam epitaxy; Spectroscopic analysis; Deep levels; Two-dimensional electron gas region; Gallium nitride
- 제목
- Deep level defects in AlxGa1-xN/GaN heterointerfaces grown by molecular beam epitaxy
- 저자
- Jeon, Hee Chang; Park, Chan Jin; Cho, Hoon Young; Kang, Tae Won; Kim, Tae Whan; Oh, Jae Eung
- 발행일
- 2007-09
- 유형
- Conference Paper
- 권
- 124-126
- 호
- PART 1
- 페이지
- 89 ~ 92