상세 보기
Tailoring Crystal Growth via Sn Incorporation for High-Performance ALD IGO FETs
- Kim, Gwang-bok;
- Jeong, Joo-hee;
- Park, Soojin;
- Choi, Sunghyun;
- An, Jiseong;
- ... Jeong, Jae Kyeong;
- 외 1명
Citations
WEB OF SCIENCE
2Citations
SCOPUS
2초록
This study presents high-performance field-effect transistors (FETs) using atomic layer deposition (ALD)-derived Sn-doped oxide semiconductors for back-end-of-line (BEOL)-compatible applications. Optimized Sn incorporation promoted (222) face crystal growth, reducing grain boundary density and enhancing carrier transport. The resulting FET exhibited a high mobility of 79.5 cm2/Vs, a low subthreshold swing of 61.0 mV/dec, and stable enhancement-mode operation. Reliability tests confirmed minimal threshold voltage shifts under external bias temperature stress, demonstrating the potential of ALD-based oxide semiconductors for next-generation memory applications.
키워드
Atomic Layer Deposition; Crystallization; Indium Gallium Tin Oxide; Oxide Semiconductor; Thin-film Transistor; Field Effect Transistors; Gallium Compounds; Grain Boundaries; Grain Growth; Mos Devices; Oxide Semiconductors; Semiconducting Indium; Semiconducting Indium Compounds; Semiconducting Tin Compounds; Thin Film Circuits; Threshold Voltage; Tin Oxides; Atomic-layer Deposition; Back End Of Lines; C. Thin Film Transistor (tft); Carriers Transport; Doped Oxides; Field-effect Transistor; Grain Boundary Densities; High Mobility; Performance; Sn-doped; Atomic Layer Deposition; Crystallization; Thin Film Transistors; TRANSISTORS
- 제목
- Tailoring Crystal Growth via Sn Incorporation for High-Performance ALD IGO FETs
- 저자
- Kim, Gwang-bok; Jeong, Joo-hee; Park, Soojin; Choi, Sunghyun; An, Jiseong; Park, Kwangmin; Jeong, Jae Kyeong
- 발행일
- 2025-10
- 유형
- Article
- 권
- 46
- 호
- 10
- 페이지
- 1781 ~ 1784
- 언어
- ENG
- 출판사
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- 발행국가
- 미국
- 분량
- 4 페이지
- ISSN
- E 1558-0563
P 0741-3106