RISC-V Integrated Nested Loop Analyzer for Runtime DRAM Test Pattern Generation

  • Kim, Saeyeon
  • Park, Sunyoung
  • Kim, Nahyeon
  • Lee, Jiyoung
  • Kim, Ji-Hoon
Citations

WEB OF SCIENCE

1
Citations

SCOPUS

1

초록

Recent advancements in DRAM technology have increased the complexity and variety of memory faults, necessitating efficient and programmable fault diagnosis, especially in AI and automotive systems where reliability is critical. This letter proposes a Nested Loop Analyzer (NLA) integrated into a RISC-V-based memory test platform to enhance both efficiency and programmability in run-time memory testing. By leveraging Loop Control Flow Analysis and Basic Block Identification, the NLA eliminates complex loop control in pattern generation and reduces pattern buffer overhead between the Pattern Generator (PG) and the DRAM physical layer (PHY). Additionally, integrating memory testing within the RISC-V system-on-chip (SoC) environment enables seamless development and integration of memory testing with general application tasks. The proposed approach provides a high-programmability, run-time DRAM test pattern generation platform with efficient hardware usage, reduced buffer requirements, and seamless RISC-V integration.

키워드

RuntimeScalabilityMemory managementRandom access memoryPhysical layerHardwareSystem-on-chipTest pattern generatorsObject recognitionTestingLoop profilingmemory testingRISC-Vtest pattern generationClosed loop control systemsDesign for testabilityDynamic random access storageFailure analysisFault detectionIntegrated circuit testingInterlocking signalsProgrammable logic controllersReduced instruction set computingSoftware reliability
제목
RISC-V Integrated Nested Loop Analyzer for Runtime DRAM Test Pattern Generation
저자
Kim, SaeyeonPark, SunyoungKim, NahyeonLee, JiyoungKim, Ji-Hoon
DOI
10.1109/LES.2025.3600611
발행일
2025-10
유형
Article
저널명
IEEE Embedded Systems Letters
17
5
페이지
333 ~ 336