Highly Active Air Electrode with Enhanced Proton Conduction via Isovalent Doping in a Layered Perovskite for Reversible Protonic Ceramic Cells

  • Yun, Jiwon; 
  • Shin, Hyeongsik; 
  • Kim, Seungchan; 
  • Seong, Boseok; 
  • Lee, Seongjae; 
  • ... Kim, Kyeounghak; 
  • 외 2명
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초록

Reversible protonic ceramic cells (R-PCCs) offer a compelling solution for efficient energy conversion and storage at intermediate temperatures (400-600 degrees C); however, their practical implementation and overall electrochemical performance are severely constrained by sluggish electrochemical reaction kinetics at the air electrode. Herein, a novel triple ionic-electronic conducting material is presented, the Ni-doped layered perovskite PrBa0.5Sr0.5Co1.8Ni0.2O5+delta (PBSCN20), to be utilized as an air electrode in R-PCCs. Thermogravimetric analysis and density functional theory calculations demonstrate that Ni doping at the Co site significantly promoted oxygen vacancy formation while simultaneously facilitating proton uptake and migration. Consequently, the R-PCCs with a PBSCN20 air electrode exhibited outstanding electrochemical performance, attaining peak power densities of 1.30 and 0.60 W cm-2 in fuel cell mode, and current densities of -1.72 and -0.41 A cm-2 at 1.3 V in electrolysis mode at 600 and 500 degrees C, respectively, as well as superior long-term stability for over 700 h at 500 degrees C.

키워드

air electrode; hydration property; layered perovskite; Ni doping effect; proton migration; reversible protonic ceramic cells; ELECTROCHEMICAL-CELLS; HIGH-PERFORMANCE; LATTICE OXYGEN; FUEL-CELLS; HYDROGEN; GENERATION; STABILITY; OXIDATION; DENSITY; POINTS
제목
Highly Active Air Electrode with Enhanced Proton Conduction via Isovalent Doping in a Layered Perovskite for Reversible Protonic Ceramic Cells
저자
Yun, Jiwon; Shin, Hyeongsik; Kim, Seungchan; Seong, Boseok; Lee, Seongjae; Kim, Kyeounghak; Choi, Sun Hee; Choi, Sihyuk
DOI
10.1002/adfm.202508758
발행일
2025-10
유형
Article; Early Access
저널명
Advanced Materials for Optics and Electronics
권
35
호
41
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