Coexistence of a phase separation and an ordered structure in CdxZn1-xTe epilayers grown on GaAs (001) substrates

Lee, HS; Sohn, HS; Lee, JY; Lee, KH; Kim, YH; Kim, TW; Kwon, MS; Park, HL

doi:10.1063/1.2195020

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Coexistence of a phase separation and an ordered structure in CdxZn1-xTe epilayers grown on GaAs (001) substrates

Lee, HS;
Sohn, HS;
Lee, JY;
Lee, KH;
Kim, YH;
외 3명

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4

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5

초록

The coexistence of a phase separation and an ordered structure in CdxZn1-xTe epilayers grown on GaAs(001) substrates by using molecular beam epitaxy was investigated. The results of selected-area electron diffraction pattern and transmission electron microscopy measurements showed that ordered structures, such as CuPt-type and CuAu-I-type ordered structures, together with a spinodal-like phase separation were formed in the CdxZn1-xTe/GaAs heteroepitaxial layers. The coexistence of the phase separation and the ordered structures is discussed.

키워드

CUPT-TYPE; EXISTENCE; ALLOYS; LAYERS; SURFACE; EPITAXY; DOMAIN

제목: Coexistence of a phase separation and an ordered structure in CdxZn1-xTe epilayers grown on GaAs (001) substrates

저자: Lee, HS; Sohn, HS; Lee, JY; Lee, KH; Kim, YH; Kim, TW; Kwon, MS; Park, HL

DOI: 10.1063/1.2195020

발행일: 2006-05

유형: Article

저널명: Journal of Applied Physics

권: 99

호: 9