Enhancement of optical properties of InGaAs/GaAs self-assembled quantum dots by thermal annealing with a SiNx/SiO2 capping layer

초록

Intermixing effects of MOCVD grown InGaAs SAQDs covered with SiO2 and SiNx-SiO2 dielectric capping layers were investigated. The intermixing of SAQDs was isothermally performed at 700C by varing annealing time under the N2-gas ambient. It was confirmed from PL measurement after the thermal annealing that, the emission energy of SAQDs was blue- shifted by 190 meV, the FWHM was narrowed from 76 meV to 47 meV and PL intensity was increased.