Synthesis of complex nano-laminating structured Ti3(AlMSi1-M)C2 and its reaction mechanism

초록

One of multi-component ternary carbide with nano laminating structure, Ti3(AlmSi1-m)C2, were synthesized by hot pressing using TiCx(x=0.67), Si and Al powder mixture as starting materials at 1400 oC under 25 MPa in Ar atmosphere. Fully dense and relatively pure Ti3(AlmSi1-m)C2 were be synthesized by hot pressing regardless of Al/Si molar ratio. It was revealed that the lattice parameter c decreased dramatically but a remained almost unchanged with an increase of Si in the Ti3(AlmSi1-m)C2 solid solutions. The synthesis mechanism of Ti3(AlmSi1-m)C2 from TiCx Al and Si powder mixture was investigated by XPS. The electrical resistivities of Ti3Al1-mSimC2 solid solutions were in the range 0.3-0.6 m at room temperature. The mechanical properties were also examined as a function of Si/Al molar ratio.