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초록
Organic memory devices with a hybrid nanocomposite consisting of the PVK and C60 were formed by using the spin-coating technique. The C-V curves for the Al/hybrid PVK and C60 composites/SiO 2/p-type Si (100) structure at room temperature showed a MIS behavior with a large flat-band voltage shift in comparison with the Al/PVK/SiO 2/p-type Si (100) structure, due to the existence of the C 60 molecules. These results indicate that organic memory device with an active layer consisting of the PVK and C60 hybrid nanocomposites hold promise for potential applications in next-generation nonvolatile polymer memory devices.
키워드
Nanotechnology; Active layers; Hybrid nano-composite; International (CO); Memory effects; Micro-processes; Non-volatile; Organic memory devices; Polymer memory devices; PolyN-vinylcarbazole (PNVC); Data storage equipment
- 제목
- Memory effects of nonvolatile polymer memory devices with an active layer consisting of poly(N-vinylcarbazole) and C60 nanocomposites
- 저자
- Ham, Jung Hoon; Jung, Jae Hun; Kim, Hyuk Joo; Lee, Dea Uk; Kim, Tae Whan
- 발행일
- 2007-11
- 유형
- Conference Paper
- 저널명
- Digest of Papers - Microprocesses and Nanotechnology 2007; 20th International Microprocesses and Nanotechnology Conference, MNC
- 페이지
- 128 ~ 129