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A novel fault detection circuit for short-circuit faults of IGBT
- Kim, Min-Sub;
- Park, Byoung-Gun;
- Kim, Rae-Young;
- Hyun, Dong-Seok
Citations
SCOPUS
29초록
This paper proposed a novel fault detection circuit comparing the gate voltage of IGBT. The proposed scheme is operated to protect IGBT under short-circuit faults such as hard switch-fault (HSF). The proposed circuit consists of two parts. One is the difference generator which generates a difference between a gate voltage and an input voltage. The other is the short-circuit fault detector using a charged voltage of capacitor for short-circuit fault detection. The feasibility of the proposed short-circuit detecting scheme is verified by simulation results.
키워드
Charged voltage; Fault detection circuits; Gate voltages; Input voltages; Short-circuit fault; Simulation result; Insulated gate bipolar transistors (IGBT); Power electronics; Fault detection
- 제목
- A novel fault detection circuit for short-circuit faults of IGBT
- 저자
- Kim, Min-Sub; Park, Byoung-Gun; Kim, Rae-Young; Hyun, Dong-Seok
- 발행일
- 2011-04
- 유형
- Conference Paper
- 저널명
- Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC
- 페이지
- 359 ~ 363