Controllable Growth of Single Layer MoS₂ and Resistance Switching Effect in Polymer/MoS₂ Structure

초록

We report a chemical vapor deposition approach and optimized growth condition to the synthesis of single layer molybdenum disulfide (MoS2). Obtaining large grain size with continuous MoS2 atomically thin films is highly responsible to the growth distance between molybdenum trioxide source and receiving silicon substrate. Experimental results indicate that triangular shape MoS2 grain size could be enlarged up to > 80 um with the precisely controlled the source-to-substrate distance under 7.5 mm. Furthermore, we demonstrate fabrication of a memory device by employing poly(methyl methacrylate) (PMMA) as insulating layer. The fabricated devices have a PMMA-MoS2/metal configuration and exhibit a bistable resistance switching behavior with high/low-current ratio around 10(3).

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