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Electrical degradation mechanism of 10-nm memory devices due to the existence of the random telegraph noise

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Electrical degradation mechanism of 10-nm memory devices due to the existence of the random telegraph noise
저자
김태환
발행일
2014-07-02
학회명
The 12th International Nanotech Symposium & Nano-Convergence Expo
개최지
Coex, Seoul, Korea

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