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Electrical properties of 10-nm-radius n-type gate all aroung twin Si nanowire field effect transistors

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Electrical properties of 10-nm-radius n-type gate all aroung twin Si nanowire field effect transistors
저자
김태환
발행일
2011-08-25
학회명
The 9th International Nanotech Symposium & Exhibition (NANO korea 2011)
개최지
KINTEX, Goyang, Gyeonggi-do, Korea

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