Correlation of nanostructure changes with the electrical properties of molybdenum disulfide (MoS2) as affected by sulfurization temperature

초록

MoS2 layers were prepared by sulfurization at temperatures ranging from 500 degrees C to 900 degrees C. Various microscopic analyses confirmed that the different sulfurization treatments altered the nanostructure of the MoS2 layers. Nanostructure alterations and enhanced crystallinity were observed at temperatures exceeding 800 degrees C. The electrical properties of field-effect transistor devices fabricated from the MoS2 layers were investigated in relation to sulfurization temperature. The field-effect mobility of the MoS2 layers significantly increased with rising sulfurization temperature. The change in nanostructure and the transition to a horizontally aligned microstructure at temperatures over 800 degrees C were explicitly correlated with the change in field-effect mobility.

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