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초록
The structural and optical properties of GaN epilayers grown on intentionally strained sapphore(0001) substrates were investigated. To examine the effects of intentionally strained sapphire substrate on the GaN epilayers, it was obliquely implanted with 2.4 MeV energy Cl+ and As+ ions to 10^15 /cm dose.
- 제목
- Influence of intentionally strained sapphire substrate on GaN epilayers
- 저자
- 김은규
- 발행일
- 2002-11-07
- 학회명
- 2002 Inter. Microprocesses and Nanotechnology Conf.
- 개최지
- Tokyo, Japan