Carrier transport mechanisms of nonvolatile write-once-read-many-times memory devices with InP-ZnS core-shell nanoparticles embedded in a polymethyl methacrylate layer

Ham, Jung Hoon; Oh, Do Hyun; Cho, Sung Hwan; Jung, Jae Hun; Kim, Tae Whan; Ryu, Eui Dock; Kim, Sang Wook

doi:10.1063/1.3097805

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Carrier transport mechanisms of nonvolatile write-once-read-many-times memory devices with InP-ZnS core-shell nanoparticles embedded in a polymethyl methacrylate layer

Ham, Jung Hoon;
Oh, Do Hyun;
Cho, Sung Hwan;
Jung, Jae Hun;
Kim, Tae Whan;
외 2명

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초록

Current-voltage (I-V) curves at 300 K for Al/InP-ZnS nanoparticles embedded in a polymethyl methacrylate layer/Al devices showed electrical bistability for write-once-read-many-times (WORM) memory devices. From the I-V curves, the ON/OFF ratio for the device with InP-ZnS nanoparticles was significantly larger than that for the device without InP-ZnS nanoparticles, indicative of the existence of charge capture in the InP nanoparticles. The estimated retention time of the ON state for the WORM memory device was more than 10 years. The carrier transport mechanisms for the WORM memory devices are described by using several models to fit the experimental I-V data.

키워드

aluminium; III-V semiconductors; II-VI semiconductors; indium compounds; nanoparticles; random-access storage; wide band gap semiconductors; write-once storage; zinc compounds; THIN-FILM; BISTABILITY; NANOCRYSTALS; PERFORMANCE

제목: Carrier transport mechanisms of nonvolatile write-once-read-many-times memory devices with InP-ZnS core-shell nanoparticles embedded in a polymethyl methacrylate layer

저자: Ham, Jung Hoon; Oh, Do Hyun; Cho, Sung Hwan; Jung, Jae Hun; Kim, Tae Whan; Ryu, Eui Dock; Kim, Sang Wook

DOI: 10.1063/1.3097805

발행일: 2009-03

유형: Article

저널명: Applied Physics Letters

권: 94

호: 11

페이지: 1 ~ 3