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Improving GaInP/GaAs/Ge triple junction solar cell efficiency with reduced growth temperature of GaAs base layer
- Kang, Ho Kwan;
- Jim, Dong Hwan;
- Kim, Chang Zoo;
- Song, Keun Man;
- Park, Wonkyu;
- ... Park, Jinsub;
- 외 2명
Citations
SCOPUS
2초록
Using GaInP as a nucleation layer, the Ge bottom cell was fabricated with a proper junction depth in the p-n junction and this Ge bottom cell was used to grow GaInP/GaAs/Ge triple junction solar cells. Then, the growth temperature of p-type GaAs base layer in the middle cell was investigated as a means of improving the solar cell efficiency. The solar cell grown at 550°C produced the improved efficiency compared to that grown at 680°C. The result suggests that the growth temperature of GaAs base layer is an important factor to improve the cell efficiency, related to the thermal stability of previously formed bottom cells.
키워드
Crystalline quality; GaInP; Ge; Solar cells; Triple junction; Efficiency; Gallium arsenide; Germanium; Growth temperature; Semiconducting gallium; Solar cells; Cell efficiency; Crystalline quality; GaInP; Junction depth; Nucleation layers; Solar cell efficiencies; Triple junction; Triple junction solar cells; Semiconductor junctions
- 제목
- Improving GaInP/GaAs/Ge triple junction solar cell efficiency with reduced growth temperature of GaAs base layer
- 저자
- Kang, Ho Kwan; Jim, Dong Hwan; Kim, Chang Zoo; Song, Keun Man; Park, Wonkyu; Ko, Chul Gi; Park, Jinsub; Kim, Hogyoung
- 발행일
- 2013-12
- 유형
- Conference Paper
- 저널명
- AIP Conference Proceedings
- 권
- 1566
- 페이지
- 419 ~ 420
- 언어
- ENG
- 출판사
- American Institute of Physics
- 발행국가
- 미국
- 분량
- 2 페이지
- ISSN
- P 0094-243X