Cobalt metal nanoparticles embedded in SiO2 dielectric layer for the application of nonvolatile memory

Yang, Jung Yup; Yoon, Kap Soo; Choi, Won Joon; Do, Young Ho; Kim, Ju Hyung; Kim, Chae Ok; Hong, Jin Pyo

doi:10.1016/j.cap.2006.03.002

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Cobalt metal nanoparticles embedded in SiO2 dielectric layer for the application of nonvolatile memory

Yang, Jung Yup;
Yoon, Kap Soo;
Choi, Won Joon;
Do, Young Ho;
Kim, Ju Hyung;
... Hong, Jin Pyo;
외 1명

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초록

Metal-oxide-semiconductor structures (MOS) with the embedded Co nanoparticles (NPs) were efficiently fabricated by utilizing an external laser irradiation technique for the application of nonvolatile memory. Images of high resolution transmission electron microscopy measurements exhibited that the Co NPs of 5 nm in diameter were clearly embedded in SiO2 gate oxide. Capacitance-voltage measurements certainly exhibited flat-band voltage shift of 2.2 V from 2 V to -8 V in sweeping range. The retention characteristics of MOS capacitors with the embedded Co NPs were also studied as a function of tunnel oxide thickness to confirm the suitability of nonvolatile memory devices with metal NPs. The experimental results reveal that our unique laser process will give possible promise for experimental efficient formation or insertion of metal NPs inside the gate oxide.

키워드

nonvolatile memory; metal nanoparticles; SILICON NANOCRYSTALS; CAPACITANCE-VOLTAGE; GATE DIELECTRICS; CHARGE RETENTION; DOTS; DEPOSITION; DEVICES; STORAGE; ENERGY

제목: Cobalt metal nanoparticles embedded in SiO2 dielectric layer for the application of nonvolatile memory

저자: Yang, Jung Yup; Yoon, Kap Soo; Choi, Won Joon; Do, Young Ho; Kim, Ju Hyung; Kim, Chae Ok; Hong, Jin Pyo

DOI: 10.1016/j.cap.2006.03.002

발행일: 2007-02

유형: Article

저널명: Current Applied Physics

권: 7

호: 2

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