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Robust 1/f Noise Unaffected by Program/Erase Cycling-Induced Damage in Ferroelectric Schottky Barrier FETs
- Shin, Wonjun;
- Koo, Ryun-Han;
- Kim, Sangwoo;
- Kwon, Dongseok;
- Kim, Jae-Joon;
- ... Kwon, Daewoong;
- 외 1명
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WEB OF SCIENCE
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6초록
This study investigates the 1/f noise characteristics of Schottky barrier (SB) ferroelectric field-effect transistors (FeFETs) and their response to program/erase (P/E) cycling-induced damage. The robustness of SB FeFETs to this damage is demonstrated, with the 1/f noise remaining unaffected even after the complete collapse of the memory window. The origin of this robustness is attributed to the separation of 1/f noise source (SB contact) and the region where P/E cycling-induced damage occurs (ferroelectric-dielectric interface).
키워드
1/f noise; Schottky barrier ferroelectric FETs (SB FeFETs); program/erase cycling; Ferroelectricity; Field effect transistors; Logic gates
- 제목
- Robust 1/f Noise Unaffected by Program/Erase Cycling-Induced Damage in Ferroelectric Schottky Barrier FETs
- 저자
- Shin, Wonjun; Koo, Ryun-Han; Kim, Sangwoo; Kwon, Dongseok; Kim, Jae-Joon; Kwon, Daewoong; Lee, Jong-Ho
- 발행일
- 2024-09
- 유형
- Article
- 권
- 45
- 호
- 9
- 페이지
- 1645 ~ 1648