급속 열처리 방법에 의한 Sn 솔더 범프의 리플로와 금속간 화합물 형성

초록

We studied a growth behavior of Intermetallic compounds (IMCs) during solder bumping with two reflow methods. Ti (50 nm), Cu (1 μm), Au (50 nm) and Ti (50 nm) thin films were deposited on SiO2/Si wafer using the DC magnetron sputtering system as the under bump metallization (UBM). And the 5 μm thick Cu bumps and 20 μm thick Sn bumps were fabricated on UBM by electroplating. Sn bumps were reflowed in RTA(Rapid Thermal Annealing) system and convection reflow oven. When RTA system was used, reflow was possible without using flux and IMC thickness formed in the solder interface was thinner than that of a convectional method.

키워드