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Study of Nitrogen High-Pressure Annealing on InGaZnO Thin-Film Transistors
- Yoon, Seokhyun;
- Tak, Young Jun;
- Yoon, Doo Hyun;
- Choi, Uy Hyun;
- Park, Jin-Seong;
- 외 2명
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We studied the effects of high-pressure annealing (HPA) on InGaZnO (IGZO) thin-film transistors (TFTs). HPA was proceeded after TFT fabrication as a post process to improve electrical performance and stability. We used N-2 as the pressurized gas. The applied pressures were 1 and 3 MPa at 200 degrees C. For N-2 HPA under 3 MPa at 200 degrees C, field-effect mobility and the threshold voltage shift under a positive bias temperature stress were improved by 3.31 to 8.82 cm(2)/(V s) and 8.90 to 4.50 V, respectively. The improved electrical performance and stability were due to structural relaxation by HPA, which leads to increased carrier concentration and decreased oxygen vacancy.
키워드
high-pressure annealing InGaZnO; post process; thin-film transistor; oxide thin-film transistor; AMORPHOUS OXIDE SEMICONDUCTOR; ELECTRICAL PERFORMANCE; ELECTRONIC-STRUCTURE; CARRIER TRANSPORT; LOW-TEMPERATURE
- 제목
- Study of Nitrogen High-Pressure Annealing on InGaZnO Thin-Film Transistors
- 저자
- Yoon, Seokhyun; Tak, Young Jun; Yoon, Doo Hyun; Choi, Uy Hyun; Park, Jin-Seong; Ahn, Byung Du; Kim, Hyun Jae
- 발행일
- 2014-08
- 유형
- Article
- 권
- 6
- 호
- 16
- 페이지
- 13496 ~ 13501