Charge trapping process of nonvolatile memory devices based on CdTe and CdTe-CdSe core-shell nanoparticles/poly(methylmethacrylate) nanocomposites

초록

Nonvolatile memory devices based on CdTe and CdTe-CdSe core-shell nanoparticles embedded in a poly(methylmethacrylate) (PMMA) layer were fabricated to investigate the variation in the carrier transport mechanisms due to a CdSe shell. Capacitance-voltage (C-V) curves for Al/CdTe nanoparticles embedded in PMMA/p-Si and Al/CdTe-CdSe nanoparticles embedded in PMMA/p-Si devices at 300 K showed that the flatband voltage shift of the C-V curve for the device with the CdTe-CdSe nanoparticles was relatively smaller than that for the device with the CdTe nanoparticle. Carrier transport mechanisms of the memory devices are described by using the C-V results, energy band diagrams, and capacitance-time retentions.

키워드