The Water-based Photoresist for Negative-Tone Images

초록

A terpolymer was prepared for a negative-tone resist material. The terpolymer P(AA/n-BA/t-BA) was synthesized by conventional emulsion polymerization. Thin films of the polymer were prepared on a silicon wafer by spin-casting the polymer emulsion containing a water-soluble photoacid generator. Irradiation of the film with 250 nm UV followed by post exposure baking and development in diluted aqueous base allowed generation of relief images at 30 μm resolution.