Metal-oxide thin-film transistor-based pH sensor with a silver nanowire top gate electrode

  • Yoo, Tae-Hee
  • Sang, Byoung-In
  • Wang, Byung-Yong
  • Lim, Dae-Soon
  • Kang, Hyun Wook
  • 외 4명
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초록

Amorphous InGaZnO (IGZO) metal-oxide-semiconductor thin-film transistors (TFTs) are one of the most promising technologies to replace amorphous and polycrystalline Si TFTs. Recently, TFT-based sensing platforms have been gaining significant interests. Here, we report on IGZO transistor-based pH sensors in aqueous medium. In order to achieve stable operation in aqueous environment and enhance sensitivity, we used Al2O3 grown by using atomic layer deposition (ALD) and a porous Ag nanowire (NW) mesh as the top gate dielectric and electrode layers, respectively. Such devices with a Ag NW mesh at the top gate electrode rapidly respond to the pH of solutions by shifting the turn-on voltage. Furthermore, the output voltage signals induced by the voltage shifts can be directly extracted by implantation of a resistive load inverter.

키워드

Metal-oxide thin-film transistorSilver nanowirepH sensorROOM-TEMPERATURE
제목
Metal-oxide thin-film transistor-based pH sensor with a silver nanowire top gate electrode
저자
Yoo, Tae-HeeSang, Byoung-InWang, Byung-YongLim, Dae-SoonKang, Hyun WookChoi, Won KookLee, Young TackOh, Young-JeiHwang, Do Kyung
DOI
10.3938/jkps.68.901
발행일
2016-04
유형
Article
저널명
Journal of the Korean Physical Society
68
7
페이지
901 ~ 907