Metal-oxide thin-film transistor-based pH sensor with a silver nanowire top gate electrode

  • Yoo, Tae-Hee; 
  • Sang, Byoung-In; 
  • Wang, Byung-Yong; 
  • Lim, Dae-Soon; 
  • Kang, Hyun Wook; 
  • 외 4명
Citations

WEB OF SCIENCE

3
Citations

SCOPUS

3

초록

Amorphous InGaZnO (IGZO) metal-oxide-semiconductor thin-film transistors (TFTs) are one of the most promising technologies to replace amorphous and polycrystalline Si TFTs. Recently, TFT-based sensing platforms have been gaining significant interests. Here, we report on IGZO transistor-based pH sensors in aqueous medium. In order to achieve stable operation in aqueous environment and enhance sensitivity, we used Al2O3 grown by using atomic layer deposition (ALD) and a porous Ag nanowire (NW) mesh as the top gate dielectric and electrode layers, respectively. Such devices with a Ag NW mesh at the top gate electrode rapidly respond to the pH of solutions by shifting the turn-on voltage. Furthermore, the output voltage signals induced by the voltage shifts can be directly extracted by implantation of a resistive load inverter.

키워드

Metal-oxide thin-film transistor; Silver nanowire; pH sensor; ROOM-TEMPERATURE
제목
Metal-oxide thin-film transistor-based pH sensor with a silver nanowire top gate electrode
저자
Yoo, Tae-Hee; Sang, Byoung-In; Wang, Byung-Yong; Lim, Dae-Soon; Kang, Hyun Wook; Choi, Won Kook; Lee, Young Tack; Oh, Young-Jei; Hwang, Do Kyung
DOI
10.3938/jkps.68.901
발행일
2016-04
유형
Article
저널명
Journal of the Korean Physical Society
권
68
호
7
페이지
901 ~ 907