A-PLR: Accumulative backup of mapping information for power loss recovery

  • Lee, Sangyong
  • Jung, Sanghyuk
  • Song, Yong Ho
Citations

SCOPUS

3

초록

In NAND flash memory based storage systems, a flash translation layer (FTL) is usually employed to hide shortcomings of NAND flash memory such as erase-before-write and asymmetric read/write response time. Although there are several types of FTLs according to the mapping granularity, it is a recent trend to use a page-level mapping FTL. There are two basic methods of power loss recovery (PLR) schemes for page-level mapping FTL: per-page-unit method and the map block-unit method; however, these methods have shortcomings in term of the recovery time and the mapping information management overhead, respectively. In order to overcome disadvantages of PLR, thus, we propose a novel PLR, named accumulative backup of mapping information for power loss recovery (A-PLR), which provides a stable data recovery performance without any management overhead.

키워드

Flash memoryMap tablePage-level mappingPower loss recoverySpare areaData recoveryFlash translation layerLevel mappingMapping informationNAND flash memoryPower-lossesRecent trendsRecovery timeResponse timeSpare areaStorage systemsComputer system recoveryInformation managementMappingNAND circuitsRecoveryFlash memory
제목
A-PLR: Accumulative backup of mapping information for power loss recovery
저자
Lee, SangyongJung, SanghyukSong, Yong Ho
DOI
10.1109/ICNIDC.2010.5657783
발행일
2010-12
유형
Conference Paper
저널명
Proceedings - 2010 2nd IEEE International Conference on Network Infrastructure and Digital Content, IC-NIDC 2010
페이지
264 ~ 269