상세 보기
Development of PCM and OTS Macro-models for HSPICE Compatible Simulation
- Choi,Jun tae;
- An, Byung kwon;
- Kim, Tony Tae-Hyoung;
- Song, Yun Heub
Citations
SCOPUS
6초록
PRAMs with PCM and OTS have been reported and applied for the crossbar array structure. The characteristics of PCM and OTS have significant effects on the PRAM operation. This paper introduces a novel PCM and OTS macro-model based on the physical mechanisms of them. The developed macro-model includes several intermediate states of PCM and OTS occurring during memory operation. This allows designers to understand the device behavior accurately and design more reliable PRAM after considering various device effects.
키워드
Macro-model; OTS; PCM; PRAM; Electron devices; Manufacture; Pulse code modulation; Crossbar arrays; Intermediate state; Macro model; Memory operations; Physical mechanism; PRAM; SPICE
- 제목
- Development of PCM and OTS Macro-models for HSPICE Compatible Simulation
- 저자
- Choi,Jun tae; An, Byung kwon; Kim, Tony Tae-Hyoung; Song, Yun Heub
- 발행일
- 2019-03
- 유형
- Conference Paper
- 저널명
- 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019
- 페이지
- 463 ~ 465