Influence of face-centered-cubic texturing of Co2Fe6B2 pinned layer on tunneling magnetoresistance ratio decrease in Co2Fe6B2/MgO-based p-MTJ spin valves stacked with a [Co/Pd](n)-SyAF layer

  • Takemura, Yasutaka
  • Lee, Du-Yeong
  • Lee, Seung-Eun
  • Chae, Kyo-Suk
  • Shim, Tae-Hun
  • 외 3명
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초록

The TMR ratio of Co2Fe6B2/MgO-based p-MTJ spin valves stacked with a [Co/Pd](n)-SyAF layer decreased rapidly when the ex situ magnetic annealing temperature (T-ex) was increased from 275 to 325 degrees C, and this decrease was associated with degradation of the Co2Fe6B2 pinned layer rather than the Co2Fe6B2 free layer. At a Tex above 325 degrees C the amorphous Co2Fe6B2 pinned layer was transformed into a face-centered-cubic (fcc) crystalline layer textured from [Co/Pd](n)-SyAF, abruptly reducing the Delta(1) coherence tunneling of perpendicular-spin-torque electrons between the (100) MgO tunneling barrier and the fcc Co2Fe6B2 pinned layer.

키워드

spin transfer torquemagnetic random access memorymagnetic tunnle junctionsROOM-TEMPERATUREJUNCTIONSDEPENDENCEANISOTROPYTHICKNESSBARRIER
제목
Influence of face-centered-cubic texturing of Co2Fe6B2 pinned layer on tunneling magnetoresistance ratio decrease in Co2Fe6B2/MgO-based p-MTJ spin valves stacked with a [Co/Pd](n)-SyAF layer
저자
Takemura, YasutakaLee, Du-YeongLee, Seung-EunChae, Kyo-SukShim, Tae-HunLian, GuodaKim, MoonPark, Jea-Gun
DOI
10.1088/0957-4484/26/19/195702
발행일
2015-05
유형
Article
저널명
Nanotechnology
26
19
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