Sustainable resistance switching performance from composite-type ReRAM device based on carbon Nanotube@Titania core-shell wires

초록

A novel nanocomposite-based non-volatile resistance switching random access memory device introducing single-walled carbon nanotube (SWCNT)@TiO2 core-shell wires was proposed for flexible electronics. The SWCNT was de-bundled by ultrasonication with sodium dodecylbenzene sulfonate (SDBS), and then the TiO2 skin layer on the SWCNT surface was successfully introduced by adding benzyl alcohol as a weak surfactant. The nanocomposite resistance switching layer was composed of the SWCNT@TiO2 core-shell wires and poly(vinyl alcohol) (PVA) matrix by a simple spin-coating method. The device exhibited reproducible resistance switching performance with a remarkably narrow distribution of operating parameters (V-SET and V-RESET were 2.63 +/- 0.16 and 0.95 +/- 0.11 V, respectively) with a large R-ON/R-OFF ratio of 10(5) for 200 consecutive switching cycles. Furthermore, the excellent resistance switching behavior in our device was maintained against mechanical stress up to 10(5) bending test. We believe that the nanocomposite memory device with SWCNT@TiO2 core-shell wires would be a critical asset to realize practical application for a flexible non-volatile memory field.

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