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The effect of an annealing process on atomic layer deposited TiO2 thin films (vol 33, 045705, 2022)
Erratum: The effect of an annealing process on atomic layer deposited TiO2thin films (Nanotechnology (2022) 33 (045705) DOI: 10.1088/1361-6528/ac2f28)
- Kim, Byunguk;
- Kang, Taeseong;
- Lee, Gucheol;
- Jeon, Hyeong tag
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0초록
We have found that the binding energy of Ti 2p peak in figure 2 was incorrect. The correct version of figure 2 is presented here. Compared with previous data, the binding energy of Ti3+2p1/2 peak was changed. (Figure Presented). © 2022 Institute of Physics Publishing. All rights reserved.
키워드
TiO2 thin film; annealing process; high dielectric constant; low leakage current; atomic layer deposition
- 제목
- The effect of an annealing process on atomic layer deposited TiO2 thin films (vol 33, 045705, 2022)
- 제목 (타언어)
- Erratum: The effect of an annealing process on atomic layer deposited TiO2thin films (Nanotechnology (2022) 33 (045705) DOI: 10.1088/1361-6528/ac2f28)
- 저자
- Kim, Byunguk; Kang, Taeseong; Lee, Gucheol; Jeon, Hyeong tag
- 발행일
- 2022-03
- 유형
- Correction
- 저널명
- Nanotechnology
- 권
- 33
- 호
- 11
- 페이지
- 1 ~ 2