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Achieving high carrier mobility in IGZO transistors by catalytic metal assisted crystallization
- Shin, Yeonwoo;
- Lee, Jiwon;
- Jeong, Jae Kyeong
Citations
SCOPUS
0초록
The transition metal catalytic layer has facilitated the low-temperature crystallization of amorphous indium gallium zinc oxide semiconductor. Subsequently, the significant enhancement in terms of device performance was observed for the crystallized IGZO transistor at a low annealing temperature of 300 °C: the field-effect mobility increased up to 54.0 cm2/Vs. © 2017 Proceedings of the International Display Workshops. All rights reserved.
키워드
High mobility; Indium gallium zinc oxide; Low-temperature crystallization; Thin-film transistor; Amorphous semiconductors; Gallium compounds; II-VI semiconductors; Semiconducting indium; Semiconducting indium compounds; Temperature; Thin film transistors; Transition metals; Zinc oxide; Amorphous-indium gallium zinc oxides; Annealing temperatures; Device performance; Field-effect mobilities; High carrier mobility; High mobility; Indium gallium zinc oxides; Low-temperature crystallization; Oxide semiconductors
- 제목
- Achieving high carrier mobility in IGZO transistors by catalytic metal assisted crystallization
- 저자
- Shin, Yeonwoo; Lee, Jiwon; Jeong, Jae Kyeong
- 발행일
- 2017-12
- 유형
- Conference Paper
- 저널명
- Proceedings of the International Display Workshops
- 권
- 1
- 페이지
- 407 ~ 409
- 언어
- ENG
- 분량
- 3 페이지
- ISSN
- P 1883-2490