An Associative Memory Device Using a Magnetic Tunnel Junction

초록

We propose an associative memory device performing a nondeclarative characteristic, whose memory is recalled by association with independent experiences after a learning event is made. In this paper, the current-induced switching characteristics of a magnetic tunnel junction implement the concept of classical conditioning. This association in memory through the learning process is electrically perceived by means of resistance changes due to the magnetoresistance effect before and after the stimulus for association is accompanied by learning. It has been confirmed that the functionality of the proposed memory device completely presents the Pavlovian type of learning with a simple circuital scheme.

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