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Quantitative Analysis of Endurance-Dependent Charge Trapping Dynamics in Ferroelectric Field-Effect Transistors with Temperature Effects
- Yang, Hyojin;
- Kim, Haesung;
- Han, Changhyeon;
- Lee, Yoonjung;
- Choi, Sung-Jin;
- ... Kwon, Daewoong;
- 외 3명
Citations
SCOPUS
0초록
We present a quantitative reliability analysis of HZO/SiO2-based MFIS FeFETs under varying T and P/E cycles. Using PUND and transient response analysis, key parameters (2Pr, VC, SVQBo, IJB) were extracted to identify degradation mechanisms. Results highlight polarization loss and domain pinning, with charge trapping behavior.
키워드
Charge Trapping; Ferroelectric Materials; Ferroelectricity; Field Effect Transistors; Iron Compounds; Reliability Analysis; Silicon Compounds; Temperature; Thermal Effects; Transient Analysis; Charge-trapping; Degradation Mechanism; Domain Pinning; Ferroelectric Fieldeffect Transistors (fefet); Keys Parameters; Polarization Domain; Polarization Loss; Transient Response Analysis; Trapping Dynamics; Degradation; Charge trapping; Ferroelectric materials; Ferroelectricity; Field effect transistors; Iron compounds; Reliability analysis; Silicon compounds; Temperature; Thermal effects; Transient analysis
- 제목
- Quantitative Analysis of Endurance-Dependent Charge Trapping Dynamics in Ferroelectric Field-Effect Transistors with Temperature Effects
- 저자
- Yang, Hyojin; Kim, Haesung; Han, Changhyeon; Lee, Yoonjung; Choi, Sung-Jin; Kim, Daehwan; Kim, Dong-myong; Kwon, Daewoong; Bae, Jong Ho
- 발행일
- 2025-07
- 유형
- Conference paper
- 저널명
- 2025 Silicon Nanoelectronics Workshop (SNW)
- 페이지
- 74 ~ 75
- 언어
- ENG
- 출판사
- Institute of Electrical and Electronics Engineers Inc.
- 분량
- 2 페이지
- ISSN
- E 2161-4644
P 2161-4636