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Multi-scale simulation of interfacial roughness effects in silicon nanowires
- Kim, Byung-Hyun;
- Jung, Hyo-Eun;
- Chung, Yong Chae;
- Shin, Mincheol;
- Lee, Kwang-Ryeol
Citations
SCOPUS
1초록
Using a unique multi-scale simulation approach combining an atomic scale simulation of silicon nanowires (SiNWs) oxidation with an interfacial roughness characterization technique and the non-equilibrium Green's function (NEGF) calculation, the interfacial roughness effect on the transport characteristics was investigated. The calculated interfacial roughness, such as the root-mean-squared (RMS) roughness and correlation length was found to be in good agreement with the previous experimental work. The RMS roughness and correlation length increased linearly during the oxidation process. The NEGF calculation result revealed the decrease of the mobility with the increase of the charge density in the oxidized SiNW with 10 nm diameter.
키워드
Interfacial roughness; Multi-scale simulation; Silicon nanowires; TCAD; Nanowires; Oxidation; Semiconductor devices; Silicon compounds; Atomic-scale simulations; Calculation results; Characterization techniques; Correlation lengths; Interfacial roughness; Multi-scale simulation; Non-equilibrium Green's function; Transport characteristics; Silicon
- 제목
- Multi-scale simulation of interfacial roughness effects in silicon nanowires
- 저자
- Kim, Byung-Hyun; Jung, Hyo-Eun; Chung, Yong Chae; Shin, Mincheol; Lee, Kwang-Ryeol
- 발행일
- 2012-09
- 유형
- Conference Paper
- 저널명
- International Conference on Simulation of Semiconductor Processes and Devices, SISPAD
- 페이지
- 47 ~ 50
- 언어
- ENG
- 출판사
- Institute of Electrical and Electronics Engineers Inc.
- 발행국가
- 미국
- 분량
- 4 페이지