Investigation of transparent conducting oxide/Si junction for the emitter wrap through solar cells

Song, J.-S.; Yang, J.-Y.; Lee, J.-S.; Hong, J.-P.; Ha, J.-H.

doi:10.1109/PVSC.2010.5614405

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Investigation of transparent conducting oxide/Si junction for the emitter wrap through solar cells

Song, J.-S.;
Yang, J.-Y.;
Lee, J.-S.;
Hong, J.-P.;
Ha, J.-H.

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초록

We have investigated properties of ITO/Si with shallow doped emitter for the increasing fill factor of emitter wrap through (EWT) solar cells. The ITO is prepared by DC magnetron sputter on p-type mono-crystalline silicon substrate. The contact resistance of ITO/Si with shallow doped emitter was measured by the transmission length method (TLM). As an experimental result, the contact resistance and the series resistance of ITO/Si with shallow doped emitter were obtained 0.0705 Ωcm2 and 0.1821 Ω;cm2, respectively. As a result of analysis by the contact resistance for optimization of ITO layer, the fill factor of EWT solar cells expected to increase above 80%.

키워드

Crystalline silicon substrates; Emitter-wrap-through; Fill factor; Magnetron sputter; P-type; Series resistances; Contact resistance; DC power transmission; Magnetron sputtering; Magnetrons; Photovoltaic effects; Solar cells

제목: Investigation of transparent conducting oxide/Si junction for the emitter wrap through solar cells

저자: Song, J.-S.; Yang, J.-Y.; Lee, J.-S.; Hong, J.-P.; Ha, J.-H.

DOI: 10.1109/PVSC.2010.5614405

발행일: 2010-11

유형: Conference Paper

저널명: Conference Record of the IEEE Photovoltaic Specialists Conference

페이지: 3611 ~ 3613