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Comparative study of Electron Mobility in SOI and Strained SGOI n-MOSFET Influenced by Surface Roughness Scattering

  • 박재근
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Comparative study of Electron Mobility in SOI and Strained SGOI n-MOSFET Influenced by Surface Roughness Scattering
저자
박재근
발행일
2006-04-20
학회명
한국물리학회
개최지
평창 휘닉스파크

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