A new modeling and gate driver design of SI-Thyristor using by 2-port network

Kim, Bong Seong; Park, Jeong-Ho; Ko, Kwang-Cheol

doi:10.1109/IPMHVC.2010.5958363

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A new modeling and gate driver design of SI-Thyristor using by 2-port network

Kim, Bong Seong;
Park, Jeong-Ho;
Ko, Kwang-Cheol

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초록

It is expected that Static Induction Thyristor (SI-Thyrsitor) has a great potential to substitute thyristor based power semiconductors on high voltage industrial field because of its faster turn-on time, operating frequency, higher di/dt and dV/dt, and comparatively higher reverse voltage endurance than the power semiconductors. However, due to its thyristor-based structure, the direct switching current commutation between the main body and the gate layer in the SI-Thyristor makes high voltage with fast operating frequency difficult. Thus, to maximize faster turn-on transient time with gate delay time in the SI-Thyristor, it is proceeded 2 port circuit analysis which is based on the transient turn-on switching experiment while switching conditions which indicates gate voltage waveform with dead time modulation, amplitude of applied high voltage across anode to cathode.

키워드

2port circuit analysis; gate driver; SI-Thyristor; 2port circuit analysis; Dead time; Gate drivers; Gate layers; Gate voltages; Gate-delay time; High voltage; Industrial fields; Operating frequency; Power semiconductors; Reverse voltages; SI-Thyristor; Static induction thyristors; Switching conditions; Switching currents; Turn-on time; Turn-on transients; Electric network analysis; Electric switchgear; Electricity; Power electronics; Power quality; Thyristors

제목: A new modeling and gate driver design of SI-Thyristor using by 2-port network

저자: Kim, Bong Seong; Park, Jeong-Ho; Ko, Kwang-Cheol

DOI: 10.1109/IPMHVC.2010.5958363

발행일: 2010-05

유형: Conference Paper

저널명: Proceedings of the 2010 IEEE International Power Modulator and High Voltage Conference, IPMHVC 2010

페이지: 341 ~ 344