Hierarchical nanostructure produced by growing carbon nanotubes on silicon oxide nanowires

Citations

SCOPUS

0

초록

It was demonstrated that an array of carbon nanotubes (CNT) can be grown using plasma-enhanced chemical vapor deposition on silicon oxide nanowires (SiOxNWs) to construct one-dimensional hierarchical heterostructure. In order to grow the CNTs on the SiOxNWs, the nanowire surface was decorated with Ni seed particles by direct physical vapor deposition without any surface pretreatment. Nano-sized Ni seed particles allowed the CNTs to nucleate on the nanowire surface. Scanning and transmission electron microscopy verified the branches of CNTs projecting from the SiOxNWs. All CNTs were multi-walled and have an average diameter of 20 nm. These CNTs cover the entire length of the individual SiOxNWs. The CNT-coated SiOxNWs can be potentially used as a nanowire-supported catalyst with high active surface area.

키워드

Active surface area; Average diameter; Heterostructures; Hierarchical Nanostructures; Multi-walled; Nano-sized; Nanowire surface; Scanning and transmission electron microscopy; Seed particle; Silicon oxide nanowires; Supported catalysts; Surface pretreatment; Carbon nanotubes; Nanowires; Physical vapor deposition; Plasma deposition; Silicon compounds; Silicon oxides; Surface chemistry; Transmission electron microscopy; Chemical vapor deposition
제목
Hierarchical nanostructure produced by growing carbon nanotubes on silicon oxide nanowires
저자
Woo, Hee-Jin; Kim, Jung Hoon; Choi, Duck Kyun; Yoon, Chong Seung
DOI
10.1149/1.3207697
발행일
2009-10
유형
Conference Paper
저널명
ECS Transactions
권
25
호
8 PART 2
페이지
991 ~ 996