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Improvement in carrier mobility of ZnON transistor by tantalum encapsulation
- Kim, MJ;
- Jeong, JK
Citations
SCOPUS
0초록
The TaOx/ZnON thin-film stack showed a more uniform distribution of nanocrystalline ZnON with an increased stoichiometric anion lattice compared to control ZnON thin-films. Significantly, improved mobility of 89.4 cm2/Vs were achieved for TaOx/ZnON TFTs. This improvement can be explained by the removal and passivation effect of TaOx film on ZnON..
키워드
Encapsulation; Scavenging effect; Tantalum oxide; Thin-film Transistors; Zinc oxynitride; Hall mobility; Hole mobility; Nanocrystals; Tantalum; Thin film transistors; Thin films; Nanocrystallines; Passivation effect; Thin film stacks; Uniform distribution; Zinc compounds
- 제목
- Improvement in carrier mobility of ZnON transistor by tantalum encapsulation
- 저자
- Kim, MJ; Jeong, JK
- 발행일
- 2019-11
- 유형
- Conference Paper
- 저널명
- Proceedings of the International Display Workshops
- 권
- 2
- 페이지
- 508 ~ 511
- 언어
- ENG
- 분량
- 4 페이지
- ISSN
- P 1883-2490