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Design of SOI wafer can have a proximity gettering ability By NH3/Ar Rapid Thermal Annealing

  • 박재근
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Design of SOI wafer can have a proximity gettering ability By NH3/Ar Rapid Thermal Annealing
저자
박재근
발행일
2004-10-21
학회명
한국물리학회 추계학술발표대회
개최지
제주도

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