Atomic arrangements of (Ga1-xMnx)N nanorods grown on Al2O3 substrates

Lee, Ki-Hyoung; Lee, Jeong Yong; Jung, Jae Hun; Kim, Tae Whan; Jeon, Hee Change; Kang, Tae Won

doi:10.1063/1.2902321

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Atomic arrangements of (Ga1-xMnx)N nanorods grown on Al2O3 substrates

Lee, Ki-Hyoung;
Lee, Jeong Yong;
Jung, Jae Hun;
Kim, Tae Whan;
Jeon, Hee Change;
외 1명

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초록

X-ray diffraction (XRD) and selected area electron diffraction pattern (SADP) results showed that the (Ga1-xMnx)N nanorods had preferential c-axial growth direction. Transmission electron microscopy (TEM) and high-resolution TEM (HRTEM) images showed that one-dimensional (Ga1-xMnx)N nanorods without defects had c-axis-oriented crystalline wurzite structures. Atomic arrangements for the (Ga1-xMnx)N nanorods grown on the Al2O3 (0001) substrates are described on the basis of the XRD, the TEM, the SADP, and the HRTEM results.

키워드

MOLECULAR-BEAM EPITAXY; SEMICONDUCTOR HETEROSTRUCTURES; ROOM-TEMPERATURE; GAMNN FILMS; FERROMAGNETISM; NANOWIRES; (GA,MN)AS; BEHAVIOR; GAN

제목: Atomic arrangements of (Ga1-xMnx)N nanorods grown on Al2O3 substrates

저자: Lee, Ki-Hyoung; Lee, Jeong Yong; Jung, Jae Hun; Kim, Tae Whan; Jeon, Hee Change; Kang, Tae Won

DOI: 10.1063/1.2902321

발행일: 2008-04

유형: Article

저널명: Applied Physics Letters

권: 92

호: 14

페이지: 1 ~ 3