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초록
This paper presents a new page replacement algorithm called Adaptive Page Replacement Algorithm (APRA), aiming at reducing the number of read, write, and erase operations and thereby improving the performance of NAND flash memory based storage systems. APRA uses a learning rule to adaptively and continually revise its parameter in response to diverse workloads with different access patterns. Experiments through simulation studies showed that the proposed algorithm performs better than other page replacement algorithms like LRU, CFLRU, CFLRU/C, LRU-WSR, in terms of read and write hit counts, and number of erase operations.
키워드
Buffer management; Embedded storages; LRU; NAND flash memory; Page replacement; Access patterns; Buffer management; Embedded storages; Erase operation; Hit count; Learning rules; NAND flash memory; Page replacement; Simulation studies; Storage systems; Adaptive algorithms; Computer science; NAND circuits; Flash memory
- 제목
- APRA: Adaptive page replacement algorithm for NAND flash memory storages
- 저자
- Shen, Baichuan; Jin, Xin; Song, Yong Ho; Lee, Sang Sun
- 발행일
- 2009-12
- 유형
- Conference Paper
- 저널명
- IFCSTA 2009 Proceedings - 2009 International Forum on Computer Science-Technology and Applications
- 권
- 1
- 페이지
- 11 ~ 14