Effect of thermal annealing on the magnetic and the optical properties of (Ga1-xMnx)N thin films grown on GaN buffer layers

초록

The annealing effect on the magnetic and the optical properties of (Ga0.991Mn0.009)N thin films grown on GaN buffer layers was investigated. The magnetization curves as functions of the magnetic field at 300 K showed that the magnetization in the (Ga0.991Mn0.009)N thin film annealed at 650 degrees C was significantly enhanced by annealing in comparison with that of the as-grown film. The photoluminescence spectra at 4 K showed that the optical properties of the (Ga0.991Mn0.009)N thin film annealed at 650 degrees C were improved due to annealing. These results can help to improve understanding of the thermal annealing effect on the magnetic and the optical properties of (Ga1-xMnx)N thin films grown on GaN buffer layers.

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