All-Sputter-Deposited Hf0.5Zr0.5O2 Double-Gate Ferroelectric Thin-Film Transistor With Amorphous Indium-Gallium-Zinc Oxide Channel

Jeong, Soi; Han, Changhyeon; Yim, Jiyong; Kim, Jeonghan; Kwon, Ki Ryun; Kim, Sangwoo; Park, Eun Chan; You, Ji Won; Choi, Rino; Kwon, Daewoong

doi:10.1109/LED.2023.3260860

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All-Sputter-Deposited Hf0.5Zr0.5O2 Double-Gate Ferroelectric Thin-Film Transistor With Amorphous Indium-Gallium-Zinc Oxide Channel

Jeong, Soi;
Han, Changhyeon;
Yim, Jiyong;
Kim, Jeonghan;
Kwon, Ki Ryun;
... Kwon, Daewoong;
외 4명

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18

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19

초록

Double-gate ferroelectric thin-film transistor (DG-FeTFT) with an amorphous indium–gallium–zinc oxide (α-IGZO) channel is demonstrated. DG-FeTFT is composed of all-sputter-deposited thin films and the bottom FeTFT (FeTFTbottom) and top conventional TFT (TFTtop) are combined into a single device that shares the α-IGZO channel and source/drain. Through the separation of read (by TFTtop) and program/erase (by FeTFTbottom) operations, it is confirmed that wide memory window (MW) of ~5V is obtained with an MW amplification and read disturbance can be significantly improved. Furthermore, it is verified that faster program/erase speeds are achievable by modulating the gate voltage of TFTtop, leading to the improved endurance characteristics.

키워드

HfO2-based ferroelectric memory; IGZO ferroelectric thin-film transistors (FeTFT); double-gate FeTFT; VOLTAGE

제목: All-Sputter-Deposited Hf0.5Zr0.5O2 Double-Gate Ferroelectric Thin-Film Transistor With Amorphous Indium-Gallium-Zinc Oxide Channel

저자: Jeong, Soi; Han, Changhyeon; Yim, Jiyong; Kim, Jeonghan; Kwon, Ki Ryun; Kim, Sangwoo; Park, Eun Chan; You, Ji Won; Choi, Rino; Kwon, Daewoong

DOI: 10.1109/LED.2023.3260860

발행일: 2023-05

유형: Article

저널명: IEEE Electron Device Letters

권: 44

호: 5

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